IRGBC30MD2-S Ver la hoja de datos (PDF) - International Rectifier

Número de pieza

componentes Descripción

Lista de partido

IRGBC30MD2-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

Previous Datasheet

Index

Next Data Sheet

IRGBC30MD2-S

16

12

60% of rated

8

v o lt a g e

4

0

0.1

1

10

f, Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I RMS of fundamental)

Duty cycle: 50%

TJ = 125°C

Tsink = 90°C

G a te d rive a s sp e cifie d

Tu rn -on losses in clud e

effe cts o f reve rse reco ve ry

P o w e r D issip ation = 2 1W

A

100

100

100

TJ = 25°C

TJ = 150°C

10

TJ = 150°C

10

TJ = 25°C

1

0.1

0.1

VGE = 15V

20µs PULSE WIDTH A

1

10

VCE , Collector-to-Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

VCC = 100V

1

5µs PULSE WIDTH A

5

10

15

20

VGE, Gate-to-Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

C-375

To Order

Share Link: