IRGBC30MD2-S Ver la hoja de datos (PDF) - International Rectifier

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IRGBC30MD2-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

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IRGBC30MD2-S

160

100

VR = 200V

TJ = 125°C

TJ = 25°C

VR = 200V

TJ = 125°C

TJ = 25°C

120

IF = 24A

IF = 12A

80

IF = 6.0A

IF = 24A

10

IF = 12A

IF = 6.0A

40

0

100

dif /dt - (A/µs)

1000

Fig. 14 - Typical Reverse Recovery vs. dif/dt

1

100

1000

di f /dt - (A/µs)

Fig. 15 - Typical Recovery Current vs. dif/dt

600

VR = 200V

TJ = 125°C

TJ = 25°C

10000

VR = 200V

TJ = 125°C

TJ = 25°C

400

IF = 24A

200

IF = 12A

IF = 6.0A

1000

100

IF = 6.0A

IF = 24A

IF = 12A

0

100

1000

dif /dt - (A/µs)

Fig. 16 - Typical Stored Charge vs. dif/dt

10

100

1000

di f /dt - (A/µs)

Fig. 17 - Typical di(rec)M/dt vs. dif/dt

C-379

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