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IRGBC30MD2-S

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

International Rectifier 

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IRGBC30MD2-S

Same type

device as

D.U.T.

+Vge

90% Vge

Vce

80%

of Vce

430µF

D.U.T.

Fig. 18a - Test Circuit for Measurement of

ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Ic 10% Vce

td(off)

90% Ic

Ic

5% Ic

tf

∫ t1+5µS

Eoff = Vce ic dt

t1

t1

t2

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

10% +Vg

GATE VOLTAGE D.U.T.

+Vg

Vce

10% Ic

Vcc

90% Ic

DUT VOLTAGE

AND CURRENT

Ipk

Ic

td(on)

5% Vce

tr

t1

∫ t2

Eon = Vce ie dt

t1

t2

Fig. 18c - Test Waveforms for Circuit of Fig. 18a,

Defining Eon, td(on), tr

Refer to Section D for the following:

trr

Ic

tx

10% Vcc

Vpk

Irr

trr

∫ Qrr = id dt

tx

10% Irr

Vcc

DIODE RECOVERY

WAVEFORMS

DIODE REVERSE

RECOVERY ENERGY

∫ t4

Erec = Vd id dt

t3

t3

t4

Fig. 18d - Test Waveforms for Circuit of Fig. 18a,

Defining Erec, trr, Qrr, Irr

Appendix D: Section D - page D-6

Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a

Fig. 19 - Clamped Inductive Load Test Circuit

Fig. 20 - Pulsed Collector Current Test Circuit

Package Outline 2 - SMD-220 Section D - page D-12

C-380

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