BTS129 Ver la hoja de datos (PDF) - Siemens AG

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BTS129

N-Channel TEMPFET®

Siemens AG 

Typ. transfer characteristic

ID = f (VGS)

Parameter: tp = 80 µs, VDS = 25 V

BTS 129

Typ. transconductance gfs = f (ID)

Parameter: tp = 80 µs, VDS = 25 V

Gate threshold voltage VGS(th) = f (Tj)

Parameter: VDS = VGS, ID = 1 mA

Continuous drain current ID = f (TC)

Parameter: VGS ≥ 10 V

Semiconductor Group

6

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