Typ. gate-source leakage current
IGSS = f (TC)
Parameter: VGS = 20 V, VDS = 0
BTS 129
Typ. capacitances C = f (VDS)
Parameter: VGS = 0, f = 1 MHz
Forward characteristics of reverse diode
IF = f (VSD)
Parameter: Tj, tp = 80 µs
Transient thermal impedance ZthJC = f (tp)
Parameter: D = tp/T
Semiconductor Group
7