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RF2483PCBA-41X(V2) Ver la hoja de datos (PDF) - RF Micro Devices

Número de pieza
componentes Descripción
Lista de partido
RF2483PCBA-41X
(Rev.:V2)
RFMD
RF Micro Devices RFMD
RF2483PCBA-41X Datasheet PDF : 28 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
RF2483
Parameter
I/Q Modulator Low Band,
cont.
Suppression at FLO-3x100kHz
Baseband Inputs DC Current
Drain*
Baseband Inputs AC Current
Drain*
Specification
Min.
Typ.
Max.
40
57
40
57
40
60
40
52
100
100
Variable Gain Amplifiers High
Band
Gain Control Voltage Range
Gain Control Range
0
2.0
32
35
Gain Control Slope
26
29
33
Gain Control Input Impedance*
10
Output Power
-3
0.4
3
-8
-5
-2
-24
-20
-16
-38
-35
-30
Output Noise at FLO+20MHz*
-155
-156.7
Output P1dB*
+6
Output IP3*
+20
Intermodulation IM3 tone at
FLO + 70 kHz and FLO + 130 kHz
relative to tone at FLO+90kHz
40
50
40
50
40
50
40
47
Unit
Condition
dBc
GC = 2.0 V
dBc
GC = 1.5 V
dBc
GC = 1.0 V
dBc
GC = 0.5 V
μA
μAPP
V
dB
dB/V
kΩ
dBm
dBm
dBm
dBm
dBm/Hz
dBm/Hz
dBm
dBm
dBc
dBc
dBc
dBc
VCC=2.7V, EN=2.7V, Bandsel=2.7V,
FLO=0dBm, PLO=1900MHz, LO HB and RF
OUT HB ports are matched to 50Ω. Input IQ
signals driven differentially and in quadrature
from a 50Ω source impedance. TA=25oC
Difference between output power at GC=2.0V
and GC=0.5V
Calculated GC=1.0V and 1.5V
GC=2.0V, IQ=800mVP-P at 100kHz
GC=1.5V, IQ=800mVP-P at 100kHz
GC=1.0V, IQ=800mVP-P at 100kHz
GC=0.5V, IQ=800mVP-P at 100kHz
GC=2.0V, IQ=800mVP-P at 100kHz
GC=2.0V, IQ=0mVP-P
IQ at 100kHz
GC=2.0V. Extrapolated from IM3 with two
baseband tones at 90kHz applied differen-
tially, in quadrature, at both I and Q inputs,
each tone 400mVP-P.
Two baseband tones at 90kHz and 110kHz
applied differentially, in quadrature, at both I
and Q inputs, each tone 400mVP-P.
GC = 2.0 V
GC = 1.5 V
GC = 1.0 V
GC = 0.5 V
4 of 28
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A8 DS060203

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