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MGW20N120

Insulated Gate Bipolar Transistor

ON Semiconductor 

MGW20N120

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector−to−Emitter Breakdown Voltage

(VGE = 0 Vdc, IC = 25 µAdc)

Temperature Coefficient (Positive)

Emitter−to−Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc)

Zero Gate Voltage Collector Current

(VCE = 1200 Vdc, VGE = 0 Vdc)

(VCE = 1200 Vdc, VGE = 0 Vdc, TJ = 125°C)

Gate−Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc)

ON CHARACTERISTICS (1)

Collector−to−Emitter On−State Voltage

(VGE = 15 Vdc, IC = 10 Adc)

(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C)

(VGE = 15 Vdc, IC = 20 Adc)

Gate Threshold Voltage

(VCE = VGE, IC = 1.0 mAdc)

Threshold Temperature Coefficient (Negative)

Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc)

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VCE = 25 Vdc, VGE = 0 Vdc,

f = 1.0 MHz)

SWITCHING CHARACTERISTICS (1)

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VCC = 720 Vdc, IC = 20 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω)

Energy losses include “tail”

Turn−Off Switching Loss

Turn−On Delay Time

Rise Time

Turn−Off Delay Time

Fall Time

(VCC = 720 Vdc, IC = 20 Adc,

VGE = 15 Vdc, L = 300 mH

RG = 20 Ω, TJ = 125°C)

Energy losses include “tail”

Turn−Off Switching Loss

Gate Charge

(VCC = 720 Vdc, IC = 20 Adc,

VGE = 15 Vdc)

INTERNAL PACKAGE INDUCTANCE

Internal Emitter Inductance

(Measured from the emitter lead 0.25″ from package to emitter bond pad)

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

Symbol

Min

Typ

Max

Unit

V(BR)CES

V(BR)ECS

ICES

IGES

VCE(on)

VGE(th)

gfe

Cies

Coes

Cres

td(on)

tr

td(off)

tf

Eoff

td(on)

tr

td(off)

tf

Eoff

QT

Q1

Q2

LE

1200

—

—

870

Vdc

—

—

mV/°C

25

—

—

Vdc

µAdc

—

—

100

—

—

2500

—

—

250

nAdc

Vdc

—

2.42

3.54

—

2.36

—

—

2.90

4.99

Vdc

4.0

6.0

8.0

—

10

—

mV/°C

—

12

—

Mhos

—

1860

—

pF

—

122

—

—

29

—

—

88

—

ns

—

103

—

—

190

—

—

284

—

—

1.65

2.75

mJ

—

83

—

ns

—

107

—

—

216

—

—

494

—

—

3.19

—

mJ

—

62

—

nC

—

21

—

—

25

—

nH

—

13

—

2

Motorola IGBT Device Data

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