MGW20N120 Ver la hoja de datos (PDF) - ON Semiconductor
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MGW20N120 Datasheet PDF : 6 Pages
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MGW20N120
100
10
1
VGE = 15 V
RGE = 20 Ω
TJ = 125°C
0.1
1
10
100
1000
VCE, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 7. Reverse Biased
Safe Operating Area
10,000
1.0
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
1.0E−05
1.0E−04
1.0E−03
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E−02
t, TIME (s)
1.0E−01
1.0E+00
1.0E+01
Figure 8. Thermal Response
4
Motorola IGBT Device Data
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