MGW20N120 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Lista de partido
MGW20N120 Datasheet PDF : 6 Pages
| |||
TYPICAL ELECTRICAL CHARACTERISTICS
MGW20N120
60
TJ = 25°C
50
40
30
VGE = 20 V
17.5 V
15 V
12.5 V
60
TJ = 125°C
50
40
30
VGE = 20 V
17.5 V
15 V
12.5 V
20
20
10 V
10
10 V
10
0
0
2
4
6
8
VCE, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 1. Output Characteristics
0
0
2
4
6
8
VCE, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 2. Output Characteristics
60
VCE = 10 V
250 µs PULSE WIDTH
40
20
TJ = 125°C
25°C
0
5 6 7 8 9 10 11 12 13 14 15
VGE, GATE−TO−EMITTER VOLTAGE (VOLTS)
Figure 3. Transfer Characteristics
10,000
1000
100
TJ = 25°C
VGE = 0 V
Cies
Coes
Cres
10
0
5
10
15
20
25
VCE, COLLECTOR−TO−EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
4
VGE = 15 V
250 µs PULSE WIDTH
3
2
IC = 20 A
15 A
10 A
1
−50
0
50
100
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Collector−to−Emitter Saturation
Voltage versus Junction Temperature
16
QT
14
12
10
8
Q1
Q2
6
4
TJ = 25°C
IC = 20 A
2
0
0
10
20
30
40
50
60
70
Qg, TOTAL GATE CHARGE (nC)
Figure 6. Gate−to−Emitter Voltage versus
Total Charge
Motorola IGBT Device Data
3
Share Link: 