BSM50GD120DN2E3226 Ver la hoja de datos (PDF) - Infineon Technologies

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BSM50GD120DN2E3226

IGBT Power Module

Infineon Technologies 

BSM 50 GD120DN2E3226

IGBT Power Module

• Power module

• 3-phase full-bridge

• Including fast free-wheel diodes

• Package with insulated metal base plate

• E3226: long terminals, limited current per terminal

Type

VCE IC

BSM 50 GD120DN2E3226 1200V 50A

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-gate voltage

RGE = 20 kΩ

Gate-emitter voltage

DC collector current

TC = 25 °C

TC = 80 °C

Pulsed collector current, tp = 1 ms

TC = 25 °C

TC = 80 °C

Power dissipation per IGBT

TC = 25 °C

Chip temperature

Storage temperature

Package

ECONOPACK 2

Symbol

VCE

VCGR

VGE

IC

ICpuls

Ptot

Tj

Tstg

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

Creepage distance

Clearance

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

RthJC

RthJCD

Vis

-

-

-

-

Semiconductor Group

1

Ordering Code

C67070-A2514-A67

Values

Unit

1200

V

1200

± 20

A

50

45

100

90

W

350

+ 150

°C

-55 ... + 150

≤ 0.35

K/W

≤ 0.7

2500

Vac

16

mm

11

F

sec

55 / 150 / 56

Jan-10-1997

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