BSM50GD120DN2E3226 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
BSM50GD120DN2E3226 Datasheet PDF : 9 Pages
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BSM 50 GD120DN2E3226
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
360
W
Ptot 280
240
200
160
120
80
40
0
0 20 40 60 80 100 120 °C 160
TC
Collector current
IC = f (TC)
parameter: VGE ≥ 15 V, Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 3
A
IC 10 2
tp = 29.0µs
100 µs
10 1
1 ms
10 0
10 ms
10 -1
10 0
10 1
DC
10 2
10 3
V
VCE
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
K/W
ZthJC 10 -1
Semiconductor Group
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -5
10 -4
10 -3
10 -2
10 -1
tp
s 10 0
4
Jan-10-1997
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