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BSM50GD120DN2E3226

IGBT Power Module

Infineon Technologies 

BSM 50 GD120DN2E3226

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time

td(on)

VCC = 600 V, VGE = 15 V, IC = 50 A

RGon = 22 Ω

-

44

Rise time

tr

VCC = 600 V, VGE = 15 V, IC = 50 A

RGon = 22 Ω

-

56

Turn-off delay time

td(off)

VCC = 600 V, VGE = -15 V, IC = 50 A

RGoff = 22 Ω

-

380

Fall time

tf

VCC = 600 V, VGE = -15 V, IC = 50 A

RGoff = 22 Ω

-

70

ns

100

100

500

100

Free-Wheel Diode

Diode forward voltage

IF = 50 A, VGE = 0 V, Tj = 25 °C

IF = 50 A, VGE = 0 V, Tj = 125 °C

Reverse recovery time

IF = 50 A, VR = -600 V, VGE = 0 V

diF/dt = -800 A/µs, Tj = 125 °C

Reverse recovery charge

IF = 50 A, VR = -600 V, VGE = 0 V

diF/dt = -800 A/µs

Tj = 25 °C

Tj = 125 °C

VF

-

-

trr

-

Qrr

-

-

V

2.3

2.8

1.8

-

µs

0.2

-

µC

2.8

-

8

-

Semiconductor Group

3

Jan-10-1997

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