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FM25V01A

128-Kbit (16K × 8) Serial (SPI) F-RAM

Cypress Semiconductor 

FM25V01A

128-Kbit (16K × 8) Serial (SPI) F-RAM

128-Kbit (16K × 8) Serial (SPI) F-RAM

Features

■ 128-Kbit ferroelectric random access memory (F-RAM)

logically organized as 16K × 8

❐ High-endurance 100 trillion (1014) read/writes

❐ 151-year data retention (See the Data Retention and

Endurance table)

❐ NoDelay™ writes

❐ Advanced high-reliability ferroelectric process

■ Very fast serial peripheral interface (SPI)

❐ Up to 40-MHz frequency

❐ Direct hardware replacement for serial flash and EEPROM

❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)

■ Sophisticated write-protection scheme

❐ Hardware protection using the Write Protect (WP) pin

❐ Software protection using Write Disable instruction

❐ Software block protection for 1/4, 1/2, or entire array

■ Device ID

❐ Manufacturer ID and Product ID

■ Low power consumption

❐ 2.5-mA active current at 40 MHz

❐ 150-A standby current

❐ 8-A sleep mode current

■ Low-voltage operation: VDD = 2.0 V to 3.6 V

■ Industrial temperature: –40 C to +85 C

■ 8-pin small outline integrated circuit (SOIC) package

■ Restriction of hazardous substances (RoHS) compliant

Functional Description

The FM25V01A is a 128-Kbit nonvolatile memory employing an

advanced ferroelectric process. An F-RAM is nonvolatile and

performs reads and writes similar to a RAM. It provides reliable

data retention for 151 years while eliminating the complexities,

overhead, and system-level reliability problems caused by serial

flash, EEPROM, and other nonvolatile memories.

Unlike serial flash and EEPROM, the FM25V01A performs write

operations at bus speed. No write delays are incurred. Data is

written to the memory array immediately after each byte is

successfully transferred to the device. The next bus cycle can

commence without the need for data polling. In addition, the

product offers substantial write endurance compared with other

nonvolatile memories. The FM25V01A is capable of supporting

1014 read/write cycles, or 100 million times more write cycles

than EEPROM.

These capabilities make the FM25V01A ideal for nonvolatile

memory applications requiring frequent or rapid writes.

Examples range from data logging, where the number of write

cycles may be critical, to demanding industrial controls where the

long write time of serial flash or EEPROM can cause data loss.

The FM25V01A provides substantial benefits to users of serial

EEPROM or flash as a hardware drop-in replacement. The

FM25V01A uses the high-speed SPI bus, which enhances the

high-speed write capability of F-RAM technology. The device

incorporates a read-only Device ID that allows the host to

determine the manufacturer, product density, and product

revision. The device specifications are guaranteed over an

industrial range of –40 C to +85 C.

For a complete list of related resources, click here.

Logic Block Diagram

WP

CS

HOLD

SCK

Instruction Decoder

Clock Generator

Control Logic

Write Protect

Instruction Register

16 K x 8

F-RAM Array

Address Register

14

8

Counter

SI

SO

Data I/O Register

3

Nonvolatile Status

Register

Cypress Semiconductor Corporation • 198 Champion Court

Document Number: 001-90881 Rev. *E

• San Jose, CA 95134-1709 • 408-943-2600

Revised January 14, 2016

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