2N5460 Ver la hoja de datos (PDF) - Vishay Semiconductors
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2N5460 Datasheet PDF : 5 Pages
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2N/SST5460 Series
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N/SST5460 2N/SST5461 2N/SST5462
Parameter
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Gate-Source Voltage
Gate-Source
Forward Voltage
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VGS
VGS(F)
IG = 10 mA , VDS = 0 V
VDS = –15 V, ID = –1 mA
VDS = –15 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
TA = 100_C
VDG = –20 V, ID = –0.1 mA
VDS = –15 V, VGS = 10 V
ID = –0.1 mA
VDS = –15 V
ID = –0.2 mA
ID = –0.4 mA
IG = –1 mA , VDS = 0 V
55
40
40
40
V
0.75 6
1
7.5 1.8
9
–1
–5
–2
–9
–4 –16 mA
0.003
5
5
5
nA
0.0003
1
1
1
mA
3
pA
–5
1.3
0.5
4
2.3
0.8 4.5
3.8
1.5
6
V
–0.7
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Reverse Transfer
Capacitance
Common-Source
Output Capacitance
Equivalent Input
Noise Voltage
gfs
gos
Ciss
Crss
Coss
en
VDS = –15 V, VGS = 0 V
f = 1 kHz
VDS = –15 V, VGS = 0 V
f = 1 MHz
VDS = –15 V, VGS = 0 V
f = 100 Hz
2N
4.5
SST
4.5
1.2
2N
1.5
SST
1.5
2N
15
SST
15
Noise Figure
VDS = –15 V, VGS = 0 V
2N
0.2
NF
f = 100 Hz, RG = 1 MW
BW = 1 Hz
SST
0.2
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v2%.
1
4
1.5
5
2
6
mS
75
75
75
mS
7
7
7
pF
2
2
2
115
115
115
nV⁄
√Hz
2.5
2.5
2.5
dB
PSCIB
www.vishay.com
9-2
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
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