2N5460 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Lista de partido
2N5460 Datasheet PDF : 5 Pages
| |||
2N/SST5460 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Transfer Characteristics
–5
VGS(off) = 1.5 V
VDS = –15 V
–4
Transfer Characteristics
–10
VGS(off) = 3 V
VDS = –15 V
–8
–3
–2
TA = –55_C
25_C
–1
125_C
0
0
0.4
0.8
1.2
1.6
2
VGS – Gate-Source Voltage (V)
1000
On-Resistance vs. Drain Current
TA = 25_C
800
VGS(off) = 1.5 V
600
3V
400
4V
200
0
–0.1
–1
–10
ID – Drain Current (mA)
Transconductance vs. Gate-Source Voltage
5
VGS(off) = 1.5 V
4
VDS = –15 V
f = 1 kHz
3
TA = –55_C
–6
TA = –55_C
–4
25_C
–2
125_C
0
0
10 nA
1
2
3
4
5
VGS – Gate-Source Voltage (V)
Gate Leakage Current
1 nA
TA = 125_C
–5 mA
100 pA
IGSS @ 125_C
–1 mA
10 p A
1 pA
TA = 25_C
–5 mA
–0.1 mA
IGSS @ 25_C
0.1 pA
0
–10
–20
–30
–40
–50
VDG – Drain-Gate Voltage (V)
Transconductance vs. Gate-Source Voltage
5
VGS(off) = 3 V
4
TA = –55_C
VDS = –15 V
f = 1 kHz
3
25_C
2
25_C
1
125_C
0
0
0.4
0.8
1.2
1.6
2
VGS – Gate-Source Voltage (V)
2
125_C
1
0
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
www.vishay.com
9-4
Document Number: 70262
S-04030—Rev. D, 04-Jun-01
Share Link: 