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IRFI540NPBF Ver la hoja de datos (PDF) - Infineon Technologies

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Lista de partido
IRFI540NPBF
Infineon
Infineon Technologies Infineon
IRFI540NPBF Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRFI540NPbF
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
100V
0.052
20A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 Full Pak eliminates the need for additional insulating
hardware in commercial-industrial applications. The molding
compound used provides a high isolation capability and a low
thermal resistance between the tab and external heat sink. This
isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heat sink
using a single clip or by a single screw fixing.
G
Gate
S
D
G
TO-220 Full-Pak
D
Drain
S
Source
Base Part Number
IRFI540NPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI540NPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
20
14
110
54
0.36
± 20
300
16
5.4
5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
RJC
Junction-to-Case
RJA
Junction-to-Ambient
Parameter
1
Typ.
–––
–––
Max.
2.8
65
Units
°C/W
2017-04-27

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