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IRFI540NPBF

HEXFET® Power MOSFET

Infineon Technologies 

IRFI540NPbF

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

1

TC = 25°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 1 Typical Output Characteristics

1000

100

VGS

TOP

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

10

4.5V

20µs PULSE WIDTH

1

TC = 175°C

A

0.1

1

10

100

VDS , Drain-to-Source Voltage (V)

Fig. 2 Typical Output Characteristics

1000

100

TJ = 25°C

TJ = 175°C

10

V DS= 50V

20µs PULSE WIDTH

1

A

4

5

6

7

8

9

10

VGS , Gate-to-Source Voltage (V)

Fig. 3 Typical Transfer Characteristics

3

3.0 ID = 27A

2.5

2.0

1.5

1.0

0.5

0.0

VGS = 10V A

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (°C)

Fig. 4 Normalized On-Resistance

vs. Temperature

2017-04-27

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