IRFI540NPBF Ver la hoja de datos (PDF) - Infineon Technologies

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IRFI540NPBF

HEXFET® Power MOSFET

Infineon Technologies 

IRFI540NPbF

20

15

10

5

0

25

50

75

100 125 150 175

TC, Case Temperature ( °C)

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

10

D = 0.50

1

0.20

0.10

0.05

PDM

0.1

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

t1

t2

0.01

0.00001

0.0001

1. Duty factor D = t1 / t 2

2. Peak T J = P DM x ZthJC + TC

0.001

0.01

0.1

1

10

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

5

2017-04-27

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