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VG36643241BT-10

CMOS Synchronous Dynamic RAM

Vanguard International Semiconductor  

VIS

Preliminary

VG3664321(4)1(2)BT

CMOS Synchronous Dynamic RAM

Absolute Maximum D.C. Ratings

Parameter

Symbol

Value

Unit

Voltage on any pin relative to Vss

VIN, VOUT

-0.5 to + 4.6

V

Supply voltage relative to Vss

VDD, VDDQ

-0.5 to + 4.6

V

Short circuit output current

IOUT

50

mA

Power dissipation

PD

1.0

W

Operating temperature

TOPT

0 to + 70

°C

Storage temperature

TSTG

-55 to + 125

°C

Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause

permanent damage. The device is not meant to be operated under conditions outside the limits

described in the operational section of this specification. Exposure to Absolute Maximum Rating

conditions for extended periods may affect device reliability.

Maximum A.C. Operating Requirements for LVTTL Compatible

Parameter

Symbol

Min

Max

Unit

Input High Voltage

VIH

2.0

VDDQ + 2.0

V

Input Low Voltage

VIL

VSSQ -2.0

0.8

V

Notes

2

2

Recommended DC Operating Conditions for LVTTL Compatible

Parameter

Symbol

Min

Typ

Supply Voltage

VDD, VDDQ

3.0

3.3

Input High Voltage, all inputs

VIH

2.0

-

Input Low Voltage, all inputs

VIL

-0.3

-

Max

Unit

3.6

V

VDD + 0.3

V

0.8

V

Recommended DC Operating Conditions for SSTL - 3 Interface

Parameter

Symbol

Min

Typ

Supply Voltage

VDD, VDDQ

3.0

3.3

Supply Voltage (Ground)

VSS, VSSQ

0

-

Reference Voltage

VREF

1.3

1.5

Termination Voltage

VTT

VREF -005

VREF

Input High Voltage, all inputs

VIH(dc)

VREF + 0.2

-

Input Low Voltage, all inputs

VIH(dc)

-0.3

-

Max

Unit

3.6

V

0

V

1.7

V

VREF + 0.05

V

VDD + 0.3

V

VREF -0.2

V

Capacitance

(Ta = 25°C, f = 1MHZ)

Parameter

Symbol

Typ

Max

Unit

Notes

Input capacitance (Address)

Input capacitance (all input pins

except address pins & data pins.)

CI1

-

4

pF

1

CI2

-

4

pF

1

Data input/output capacitance

CI/O

-

5

pF

1

Notes : 1. Capacitance measured with effective capacitance measuring method.

2. The overshoot and undershoot voltage duration is ≤ 3ns with no input clamp diodes.

Document : 1G5-0099

Rev.1

Page 5

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