STP5NB60 Ver la hoja de datos (PDF) - STMicroelectronics
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STP5NB60 Datasheet PDF : 9 Pages
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STP5NB60
®
STP5NB60FP
N - CHANNEL 600V - 1.8Ω - 5A - TO-220/TO-220FP
PowerMESH™ MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NB60
600 V < 2.0 Ω
5A
STP5NB60FP
600 V
< 2.0 Ω
3A
s TYPICAL RDS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
t(s) Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
c advanced family of power MOSFETs with
u outstanding performances. The new patent
rod pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
P lowest RDS(on) per area, exceptional avalanche
te and dv/dt capabilities and unrivalled gate charge
le and switching characteristics.
so APPLICATIONS
b s HIGH CURRENT, HIGH SPEED SWITCHING
O s SWITCH MODE POWER SUPPLIES (SMPS)
- s DC-AC CONVERTERS FOR WELDING
) EQUIPMENT AND UNINTERRUPTIBLE
t(s POWER SUPPLIES AND MOTOR DRIVE
duc ABSOLUTE MAXIMUM RATINGS
ro Symbol
Parameter
te P VDS
le VDGR
so VGS
bID
O ID
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
3
2
1
TO-220
3
2
1
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP5NB60 STP5NB60FP
600
600
± 30
5
3
3.1
1.9
Unit
V
V
V
A
A
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
20
20
A
100
35
W
0.8
0.28
W/oC
dv/dt(1) Peak Diode Recovery voltage slope
4.5
4.5
V/ns
VISO Insulation Withstand Voltage (DC)
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
August 2001
2500
-65 to 150
150
(1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V
oC
oC
1/9
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