STP5NB60 Ver la hoja de datos (PDF) - STMicroelectronics
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STP5NB60 Datasheet PDF : 9 Pages
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STP5NB60/FP
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
TO-220
1.25
TO220-FP
3.57
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Min.
Value
Max.
Value
Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
5
A
300
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
t(s) OFF
c Symbol
du V(BR)DSS
ro IDSS
lete P IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc = 125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
600
Typ. Max.
1
50
± 100
Unit
V
µA
µA
nA
bso ON (∗)
O Symbol
) - VGS(th)
t(s RDS(on)
roduc ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 2.5 A
Resistance
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
3
Typ.
4
Max.
5
Unit
V
1.8
2.0
Ω
5.0
A
P DYNAMIC
lete Symbol
o gfs (∗)
ObsCiss
Parameter
Forward
Transconductance
Input Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2.5 A
Min.
2.5
Typ.
4.5
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
680 884 pF
Coss Output Capacitance
103 139 pF
Crss Reverse Transfer
10.5 14
pF
Capacitance
2/9
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