STP5NB60 Ver la hoja de datos (PDF) - STMicroelectronics
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STP5NB60 Datasheet PDF : 9 Pages
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STP5NB60/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Qg
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
VDD = 300 V ID = 2.5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID = 5 A VGS = 10 V
Min.
Typ.
12
10
Max.
17
14
Unit
ns
ns
21
30
nC
7.6
nC
7.5
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
tr(Voff) Off-voltage Rise Time VDD = 480 V ID = 5 A
8
13
ns
tf
Fall Time
RG = 4.7 Ω VGS = 10 V
7
12
ns
tc
Cross-over Time
(see test circuit, figure 5)
t(s) SOURCE DRAIN DIODE
c Symbol
Parameter
Test Conditions
u ISD
rod ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
P VSD (∗) Forward On Voltage
ISD = 5 A VGS = 0
te trr
Reverse Recovery
le Time
o Qrr
Reverse Recovery
s Charge
ISD = 5 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
b IRRM
Reverse Recovery
Current
- O (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
15
23
ns
Min.
Typ.
Max.
5
20
Unit
A
A
1.6
V
610
ns
3.6
µC
11.7
A
Obsolete Product(s) Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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