1N5802-1 Hoja de datos - Microsemi Corporation
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1N5802-1
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3 Pages
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30.4 kB
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Microsemi Corporation
FEATURES:
• Chip Outline Dimensions: 41 x 41 mils
• Chip Thickness: 8 to 12 mils
• Anode Metallization: Aluminum
• Metallization Thickness: 50,000Ã Nominal
• Bonding Area: 23 x 23 mils Min.
• Back Metallization: Gold
• Junction Passivated with Thermal Silicon Dioxide - Planar Design
• Backside Available with Solderable Ag Backside as JANHCF or JANKCF
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FAST RECOVERY GLASS PASSIVATED RECTIFIER 3.0 AMPS, 50 THRU 600 VOLTS
New Jersey Semiconductor
75 AMPS 50 - 1000 VOLTS FAST RECOVERY THREE PHASE BRIDGE RECTIFIER
Solid State Devices, Inc.
10 AMPS 50 ─1000 VOLTS ULTRA FAST RECOVERY SINGLE PHASE BRIDGE RECTIFIER
Solid State Devices, Inc.
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