[WXDH ELECTRONICS]

Description
These N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. Which accords with the RoHS standard.

FEATUREs
● Fast Switching
● Low ON Resistance(Rdson≤4.5Ω)
● Low Gate Charge(Typical Data:8nC)
● Low Reverse Transfer Capacitances(Typical:3.8pF)
● 100% Single Pulse Avalanche Energy Test
● 100% ΔVDS Test

APPLICATIONs
● Used in Various Power Switching Circuit for System Miniaturization and Higher Efficiency.
● Power Switch Circuit of Electron Ballast and Adaptor.