datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  HY ELECTRONIC CORP.  >>> 2N7002KDW PDF

2N7002KDW Hoja de datos - HY ELECTRONIC CORP.

2N7002KDW image

Número de pieza
2N7002KDW

Other PDF
  no available.

PDF
DOWNLOAD     

page
4 Pages

File Size
246.9 kB

Fabricante
HY
HY ELECTRONIC CORP. HY

RDS(ON), VGS@10V, IDS@500mA=2Ω
RDS(ON), VGS@4.5V, IDS@200mA=3Ω


FEATURES
• Advanced Trench Process Technology
• Ultra Low On Resistance : 2Ω
• Fast Switching Speed : 20ns
• Low Input and Output Leakage Current
• 2KV ESD Protection
• Specially Designed for High Speed Circuit, Battery Operated System, Drivers : Lamps, Transistors, Relays, Memories, Display, etc..
• Compliant to EU RoHS Directive 2002/95/EC

MECHANIALDATA
• Case : SOT-363 Molded Plastic
• Terminals : Solder plated, solderable per MIL-STD-750, Method 2026
• Marking : 702

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
PDF
Fabricante
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2012 )
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
Ver
PANJIT INTERNATIONAL

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]