datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  PANJIT INTERNATIONAL  >>> 2N7002KTB6 PDF

2N7002KTB6 Hoja de datos - PANJIT INTERNATIONAL

2N7002KTB6 image

Número de pieza
2N7002KTB6

Other PDF
  no available.

PDF
DOWNLOAD     

page
5 Pages

File Size
127.3 kB

Fabricante
PanJit
PANJIT INTERNATIONAL PanJit

FEATURES
• RDS(ON), VGS@10V,IDS@500mA=3Ω
• RDS(ON), VGS@4.5V,IDS@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• In compliance with EU RoHS 2002/95/EC directives

MECHANICAL DATA
• Case: SOT-563 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 27

Page Link's: 1  2  3  4  5 

Número de pieza
componentes Descripción
PDF
Fabricante
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
Ver
PANJIT INTERNATIONAL
60V ESD Protected N-Channel Enhancement Mode MOSFET
Ver
HY ELECTRONIC CORP.
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2009 )
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2012 )
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected
Ver
PANJIT INTERNATIONAL
60V N-Channel Enhancement Mode MOSFET - ESD Protected ( Rev : 2010 )
Ver
PANJIT INTERNATIONAL

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]