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2SA1987(2013) Hoja de datos - Toshiba

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Número de pieza
2SA1987

componentes Descripción
TOSHIBA Transistor Silicon PNP Triple Diffused Type

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page
4 Pages

File Size
132.1 kB

Fabricante
Toshiba
Toshiba Toshiba

Power Amplifier Applications

• High breakdown voltage: VCEO = −230 V (min)
• Complementary to 2SC5359
• Recommended for 100-W high-fidelity audio frequency amplifier output stage.

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
PDF
Fabricante
TTA0002
TOSHIBA Transistor Silicon PNP Triple Diffused Type ( Rev : 2009 )
Ver
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2SB1375
TOSHIBA Transistor Silicon PNP Triple Diffused Type
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2SA1972
TOSHIBA Transistor Silicon PNP Triple Diffused Type
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2SA1940
TOSHIBA Transistor Silicon PNP Triple Diffused Type
Ver
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2SB1411
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1997 )
Ver
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2SA1804
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
Ver
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2SA1822
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE
Ver
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2SA1923
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1999 )
Ver
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2SA1925
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1998 )
Ver
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2SA949
TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE ( Rev : 1997 )
Ver
Toshiba

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