DESCRIPTION
➤ 2SB154100MA is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
➤ Due to special schottky barrier structure, the chips
have very low reverse leakage current ( typical
IR=0.002mA@ Vr=100V ) and maximum 150°C
operation junction temperature;
➤ Low power losses, high efficiency;
➤ Guard ring construction for transient protection;
➤ High ESD capability;
➤ High surge capability;
➤ Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits;
➤ Chip Size: 1540μm X 1540μm;
➤ Chip Thickness: 280±20μm;