DESCRIPTION
➤ 2SB183100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology;
➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature;
➤ Low power losses, high efficiency;
➤ Guard ring construction for transient protection;
➤ High ESD capability;
➤ High surge capability;
➤ Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;
➤ Chip Size: 1830mm X 1830mm;
➤ Chip Thickness: 280±20mm;
➤ Have two top side electrode materials for customer to choose, detail refer to ordering specifications.