DESCRIPTION
➤  2SB183100MA  is  a schottky  barrier  diode  chips fabricated in silicon epitaxial planar technology;
➤  Due to special schottky barrier structure, the   chips have  very  low  reverse  leakage  current  (  typical IR=0.002mA@  Vr=100V  )  and  maximum  150°C operation junction temperature;
➤  Low power losses, high efficiency;
➤  Guard ring construction for transient protection;
➤  High ESD capability;
➤  High surge capability;
➤  Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits;
➤  Chip Size: 1830mm X 1830mm;
➤ Chip Thickness: 280±20mm;
➤ Have two top side electrode materials for customer to choose, detail refer to ordering specifications.