2SD1140(1997) Hoja de datos - Toshiba
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2SD1140
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Toshiba
MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS.
SWITCHING APPLICATIONS.
POWER AMPLIFIER APPLICATIONS.
• High DC Current Gain
: hFE = 4000 (Min.)
• Low Saturation Voltage
: VCE (sat) = 1.5 V (Max.)
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 1999 )
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
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