2SD1224 Hoja de datos - Toshiba
Número de pieza
2SD1224
componentes Descripción
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5 Pages
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140.5 kB
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Toshiba
Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Número de pieza
componentes Descripción
PDF
Fabricante
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington) ( Rev : 2010 )
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Toshiba
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