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2SJ496 Hoja de datos - Hitachi -> Renesas Electronics

2SJ496 image

Número de pieza
2SJ496

Other PDF
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PDF
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page
10 Pages

File Size
46 kB

Fabricante
Hitachi
Hitachi -> Renesas Electronics Hitachi

Features
• Low on-resistance
  RDS(on) = 0.12Ω typ. (at VGS = –10 V, ID = –2.5 A)
• 4V gate drive devices.
• Large current capacitance
  ID = –5 A

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Número de pieza
componentes Descripción
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Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Ver
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Ver
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Ver
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Ver
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Ver
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Ver
KEXIN Industrial
Silicon P-Channel MOS FET High Speed Power Switching
Ver
Renesas Electronics
Silicon P Channel MOS FET High Speed Power Switching
Ver
Renesas Electronics

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