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H7P0601DL Hoja de datos - Renesas Electronics

H7P0601DL image

Número de pieza
H7P0601DL

componentes Descripción
Silicon P-Channel MOS FET High Speed Power Switching

Other PDF
  no available.

PDF
DOWNLOAD     

page
11 Pages

File Size
84.2 kB

Fabricante
Renesas
Renesas Electronics Renesas

Features
• Low on-resistance
  RDS(on) = 40 mΩ typ.
• Low drive current
• 4.5 V gate drive device can driven from 5 V source

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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