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2SK2013(1998) Hoja de datos - Toshiba

2SK2013 image

Número de pieza
2SK2013

componentes Descripción
SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

Other PDF
  2006   lastest PDF  

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page
3 Pages

File Size
159.4 kB

Fabricante
Toshiba
Toshiba Toshiba

AUDIO FREQUENCY POWER AMPLIFIER APPLICATION

• High Breakdown Voltage : VDSS = 180V
• High Forward Transfer Admittance : |Yfs| = 0.7 S (Typ.)
• Complementary to 2SJ313 


Número de pieza
componentes Descripción
PDF
Fabricante
2SK2145
SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Ver
Toshiba
2SK1529
Silicon N-Channel MOS Type Field Effect Transistor
Ver
Toshiba
2SK1529
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR ( Rev : 1998 )
Ver
Toshiba
2SK1358
Field Effect Transistor Silicon N Channel MOS Type
Ver
New Jersey Semiconductor
2SK1529
Silicon N-Channel MOS Type Field Effect Transistor ( Rev : 2006 )
Ver
Toshiba
2SK241
Silicon N Channel MOS Type Field Effect Transistor
Ver
Toshiba
2SK525
SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR
Ver
Toshiba
2SK3279
N-channel MOS Type Silicon Field Effect Transistor
Ver
SANYO -> Panasonic
2SK2320
Field Effect Transistor Silicon N-Channel MOS Type
Ver
Unspecified
K2078
Field Effect Transistor Silicon N Channel MOS Type
Ver
Toshiba

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