General Description
This Power MOSFET is produced using Winsemis advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM.

FEATUREs
◾ 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V
◾ Ultra-low Gate charge(Typical 43nC)
◾ Fast Switching Capability
◾ 100%Avalanche Tested
◾ Maximum Junction Temperature Range(150℃)