2SK3462 Hoja de datos - Toshiba
Número de pieza
2SK3462
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6 Pages
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177.6 kB
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Toshiba
Switching Regulator, DC/DC Converter and Motor Drive Applications
• 4 V gate drive
• Low drain-source ON-resistance: RDS (ON)= 1.2 Ω(typ.)
• High forward transfer admittance: |Yfs| = 2.2 S (typ.)
• Low leakage current: IDSS= 100 μA (VDS= 250 V)
• Enhancement mode: Vth= 1.5~3.5 V (VDS= 10 V, ID= 1 mA)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
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