K2662T Hoja de datos - Toshiba
Número de pieza
K2662T
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Toshiba
DC−DC Converter, Relay Drive and Motor Drive Applications
Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.)
High forward transfer admittance : |Yfs| = 4.0 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
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