30G120ASW Hoja de datos - Advanced Power Electronics Corp
Número de pieza
30G120ASW
componentes Descripción
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4 Pages
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Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
FEATUREs
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat)=2.9V@IC=30A
▼ CO-PAK, IGBT With FRD
▼ RoHS Compliant
Número de pieza
componentes Descripción
PDF
Fabricante
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD.
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. ( Rev : 2015 )
Advanced Power Electronics Corp
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