4926N Hoja de datos - ON Semiconductor
Número de pieza
4926N
componentes Descripción
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7 Pages
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114.3 kB
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ON Semiconductor
NTMFS4926N : Power MOSFET
FEATUREs
1. Low RDS(on)to Minimize Conduction Losses
2. Low Capacitance to Minimize Driver Losses
3. Optimized Gate Charge to Minimize Switching Losses
4. Optimized for 5 V, 12 V Gate Drives
5. These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Número de pieza
componentes Descripción
PDF
Fabricante
Power MOSFET 30 V, 0.9 m, 303 A, Single N−Channel, SO−8FL ( Rev : 2014 )
ON Semiconductor
N-channel 30 V, 0.018 Ω typ., 8 A, P-channel 30 V, 0.045 Ω typ., 5 A Power MOSFET in a SO-8 package ( Rev : 2014 )
STMicroelectronics
Dual n-channel 30 V, 0.09 Ω, 3 A SO-8 STripFET™ Power MOSFET ( Rev : 2009 )
STMicroelectronics
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