STS8C5H30L(2014) Hoja de datos - STMicroelectronics
Número de pieza
STS8C5H30L
componentes Descripción
Other PDF
PDF
page
18 Pages
File Size
816.8 kB
Fabricante
STMicroelectronics
Description
This device is a complementary N-channel and P-channel Power MOSFET developed using STripFET™ II (P-channel) and STripFET™ V (N-channel) technologies. The resulting transistors show extremely high packing density for low on-resistance and rugged avalanche characteristics.
FEATUREs
• Conduction losses reduced
• Switching losses reduced
• Low threshold drive
• Standard outline for easy automated surface mount assembly
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
PDF
Fabricante
N-channel 20 V, 30 mΩ typ., 6 A, 2.7 V drive, STripFET™ II Power MOSFET in an SO-8 package
STMicroelectronics
N-channel 30 V, 0.0014 Ω typ., 35 A STripFET™ V Power MOSFET in a PowerFLAT™ 5x6 package ( Rev : 2013 )
STMicroelectronics
N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package
STMicroelectronics
N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package ( Rev : 2015 )
STMicroelectronics
N-channel 30 V, 0.008 Ω, 12 A STripFET™ II Power MOSFET in SO-8 package ( Rev : 2012 )
STMicroelectronics
Share Link: