Description
ACE4710B combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage schottky diode. This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.

FEATUREs
MOSFET
● VDS(V)=-20V
● ID=-4A
● RDS(ON)@-4.5V, 58mΩ (Typ.)
● RDS(ON)@-2.5V, 76mΩ (Typ.)
● RDS(ON)@-1.8V, 97mΩ (Typ.)

Schottky
● VR 20V
● IF 2A
● VF@1A<430mV

APPLICATION
● Li Battery Charging
● High Side DC/DC Converter
● High Side Driver for Brushless DC Motor
● Power Management in Portable, Battery Powered Devices