Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

FEATUREs
• DIOFET Utilizes a Unique Patented Process to Monolithically
   Integrate a MOSFET and a Schottky in a Single Die to Deliver:
   ◾ Low RDS(ON)—Minimizes Conduction Losses
   ◾ Low VSD—Reduces Losses due to Body Diode Conduction
   ◾ Low Qrr—Lower Qrr of the Integrated Schottky Reduces
      Body Diode Switching Losses
   ◾ Low Gate Capacitance (Qg/Qgs) Ratio—Reduces Risk of
      SHOOT-THROUGH or Cross Conduction Currents at High
      Frequencies
   ◾ Avalanche Rugged—IAR and EAR Rated
• ESD Protected
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• DC-DC Converters
• Power Management Functions