ACE633FM+H Hoja de datos - ACE Technology Co., LTD.
Número de pieza
ACE633FM+H
componentes Descripción
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no available.
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page
10 Pages
File Size
1.1 MB
Fabricante
ACE Technology Co., LTD.
Description
The ACE633 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.
FEATUREs
● N-Channel
VDS(V)=60V
ID=5A
RDS(ON)
<35mΩ (VGS=10V)
<40mΩ (VGS=4.5V)
● P-Channel
VDS(V)=-60V
ID=-3.5A
RDS(ON)
<75mΩ (VGS=-10V)
<90mΩ (VGS=-4.5V)
Número de pieza
componentes Descripción
PDF
Fabricante
60V Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
Complementary Enhancement Mode Field Effect Transistor ( Rev : V2 )
Alpha and Omega Semiconductor
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