General Description
The AO4612 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

FEATUREs
   n-channel                    p-channel
   VDS (V) = 60V            -60V
   ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)

   RDS(ON)                     RDS(ON)
   < 56mΩ (VGS=10V)    < 105mΩ (VGS = -10V)
   < 77mΩ (VGS=4.5V)   < 135mΩ (VGS = -4.5V)

   100% Rg tested