Introduction
The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.

EDGE Features
Typical EDGE performance,
1990 MHz, 26 V, IDQ = 400 mA:
— Output power (POUT): 18 W typical.
— Power gain: 14.5 dB.
— Efficiency: 35% typical.
— Spectral regrowth:
   @ ±400 kHz = –62 dBc.
   @ ±600 kHz = –74 dBc.
— Error vector magnitude (EVM) = 2.0%.

GSM Features
Typical performance over entire GSM band:
— P1dB: 50 W typical.
— Power gain @ P1dB = 14.0 dB continuous wave (CW).
— Efficiency @ P1dB = 54% typical CW.
— Return loss: –10 dB.

Device Performance Features
   High-reliability, gold-metalization process.
   Low hot carrier injection (HCI) induced bias drift
      over 20 years.
   Internally matched.
   High gain, efficiency, and linearity.
   Integrated ESD protection.
   Device can withstand 10:1 voltage standing wave
      ratio (VSWR) at 28 Vdc, 1930 MHz, 45 W CW output power.
   Large signal impedance parameters available.