Description
The PTF191601E and PTF191601F are 160-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the 1930 to 1990 MHz band. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.

FEATUREs
• Thermally-enhanced packaging
• Broadband internal matching
• Typical EDGE performance
   - Average output power = 80 W
   - Gain = 14 dB
   - Efficiency = 35%
   - EVM = 2.5%
• Typical CW performance
   - Output power at P–1dB = 180 W
   - Gain = 13 dB
   - Efficiency = 47%
• Integrated ESD protection: Human Body
   Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
   160 W (CW) output power