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AM29F400AT-70FI Hoja de datos - Advanced Micro Devices

AM29F400AB-120EC image

Número de pieza
AM29F400AT-70FI

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35 Pages

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136.6 kB

Fabricante
AMD
Advanced Micro Devices AMD

GENERAL DESCRIPTION
The Am29F400A is a 4 Mbit, 5.0 Volt-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The 4 Mbits of data is divided into 11 sectors of one 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbytes, for flexible erase capability. The 8 bits of data will appear on DQ0–DQ7 or 16 bits on DQ0–DQ15. The Am29F400A is offered in 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 Volt VCCsupply. 12.0 Volt VPPis not required for program or erase operations. The device can also be reprogrammed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■5.0 V ±10% for read and write operations
— Minimizes system level power requirements
■Compatible with JEDEC-standards
— Pinout and software compatible with single-power-supply flash
— Superior inadvertent write protection
■Package options
— 44-pin SO
— 48-pin TSOP
■Minimum 100,000 write/erase cycles guaranteed
■High performance
— 60 ns maximum access time
■Sector erase architecture
— One 16 Kbyte, two 8 Kbytes, one 32 Kbyte, and seven 64 Kbytes
— Any combination of sectors can be erased. Also supports full chip erase.
■Sector protection
— Hardware method that disables any combination of sectors from write or erase operations. Implemented using standard PROM programming equipment.
■Embedded EraseAlgorithms
— Automatically preprograms and erases the chip or any sector
■Embedded ProgramAlgorithms
— Automatically programs and verifies data at specified address
■DataPolling and Toggle Bit feature for detection of program or erase cycle completion
■Ready/Busyoutput (RY/BY)
— Hardware method for detection of program or erase cycle completion
■Erase Suspend/Resume
— Supports reading data from a sector not being erased
■Low power consumption
— 20 mA typical active read current for Byte Mode
— 28 mA typical active read current for Word Mode
— 30 mA typical program/erase current
■Enhanced power management for standby mode
—1 µA typical standby current
■Boot Code Sector Architecture
— T = Top sector
— B = Bottom sector
■Hardware RESET pin
— Resets internal state machine to the read mode

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