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AM29LV400BB-120EC

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48 Pages

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AMD
Advanced Micro Devices AMD

GENERAL DESCRIPTION
The Am29LV400B is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288 bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system using only a single 3.0 volt VCC supply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
   — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
   — Regulated voltage range: 3.0 to 3.6 volt read and write operations for compatibility with high performance 3.3 volt microprocessors
■ Manufactured on 0.32 µm process technology
   — Compatible with 0.5 µm Am29LV400 device
■ High performance
   — Full voltage range: access times as fast as 70 ns
   — Regulated voltage range: access times as fast as 55 ns
■ Ultra low power consumption (typical values at 5 MHz)
   — 200 nA Automatic Sleep mode current
   — 200 nA standby mode current
   — 7 mA read current
   — 15 mA program/erase current
■ Flexible sector architecture
   — One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)
   — One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)
   — Supports full chip erase
   — Sector Protection features:
      — A hardware method of locking a sector to prevent any program or erase operations within that sector
      — Sectors can be locked in-system or via programming equipment
      Temporary Sector Unprotect feature allows code changes in previously locked sectors
■ Unlock Bypass Program Command
   — Reduces overall programming time when issuing multiple program command sequences
■ Top or bottom boot block configurations available
■ Embedded Algorithms
   — Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
   — Embedded Program algorithm automatically writes and verifies data at specified addresses
■ Minimum 1,000,000 write cycle guarantee per sector
■ 20-year data retention at 125°C
   — Reliable operation for the life of the system
■ Package option
   — 48-ball FBGA
   — 48-pin TSOP
   — 44-pin SO
   — Lead (Pb) - Free Packaging Available
■ Compatibility with JEDEC standards
   — Pinout and software compatible with single-power supply Flash
   — Superior inadvertent write protection
■ Data# Polling and toggle bits
   — Provides a software method of detecting program or erase operation completion
■ Ready/Busy# pin (RY/BY#)
   — Provides a hardware method of detecting program or erase cycle completion
■ Erase Suspend/Erase Resume
   — Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
■ Hardware reset pin (RESET#)
   — Hardware method to reset the device to reading array data

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