datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Alliance Semiconductor  >>> AS29F200 PDF

AS29F200 Hoja de datos - Alliance Semiconductor

29F200-120 image

Número de pieza
AS29F200

Other PDF
  no available.

PDF
DOWNLOAD     

page
20 Pages

File Size
206.2 kB

Fabricante
Alliance
Alliance Semiconductor Alliance

FUNCTIONAL DESCRIPTION
The AS29F200 is a 2 megabit, 5 volt only Flash memory organized as 256K bytes of 8 bits each or 128K words of 16 bits each. For flexible erase and program capability, the 2 megabits of data is divided into 7 sectors: one 16K byte, two 8K byte, one 32K byte, and three 64K bytes. The ×8 data appears on DQ0–DQ7; the ×16 data appears on DQ0–DQ15. The AS29F200 is offered in JEDEC standard 44-pin SO and 48-pin TSOP packages. This device is designed to be programmed and erased in-system with a single 5.0V VCC supply. The device can also be reprogrammed in standard EPROM programmers.


FEATUREs
• Organization: 256K×8 or 128K×16
• Sector architecture
    - One 16K; two 8K; one 32K; and three 64K byte sectors
    - Boot code sector architecture—T (top) or B (bottom)
    - Erase any combination of sectors or full chip
• Single 5.0±0.5V power supply for read/write operations
• Sector protection
• High speed 55/70/90/120 ns address access time
• Automated on-chip programming algorithm
    - Automatically programs/verifies data at specified address
• Automated on-chip erase algorith
    - Automatically preprograms/erases chip or specified sectors
• 10,000 write/erase cycle endurance
• Hardware RESET pin
    - Resets internal state machine to read mode
• Low power consumption
    - 20 mA typical read current
    - 30 mA typical program current
    - 300 µA typical standby current
    - 1 µA typical standby current (RESET = 0)
• JEDEC standard software, packages and pinouts
    - 48-pin TSOP
    - 44-pin SO
• Detection of program/erase cycle completion
    - DQ7 DATA polling
    - DQ6 toggle bit
    - RY/BY output
• Erase suspend/resume
    - Supports reading data from a sector not being erased
• Low VCC write lock-out below 2.8V

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

Número de pieza
componentes Descripción
PDF
Fabricante
5V 256K x 8/128K x 8 CMOS FLASH EEPROM
Ver
Alliance Semiconductor
5V 128K x 8 CMOS Flash EEPROM
Ver
Alliance Semiconductor
5V 128K x 8 CMOS Flash EEPROM
Ver
Alliance Semiconductor
5V 512K x 8 CMOS FLASH EEPROM
Ver
Alliance Semiconductor
5V 512K x 8 CMOS FLASH EEPROM
Ver
Alliance Semiconductor
5V 128K X 8 CMOS SRAM
Ver
Alliance Semiconductor
5V 128K X 8 CMOS SRAM
Ver
Alliance Semiconductor
128K x 8 CMOS FLASH MEMORY
Ver
Winbond
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
Ver
Macronix International
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
Ver
Macronix International

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Japanese日本語 Russianрусский

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]